Suzhou Institute of nanotechnology and nano bionics researcher Yang Hui team developed a third generation of semiconductor laser on silicon nitride based on silicon nitride based laser which is also the world’s first team can work continuously at room temperature. Related research recently published in “nature photonics”.
However, because of the third generation semiconductor thermal expansion coefficient is about two times that of silicon on silicon substrate at high temperature (1000 DEG C) Gan deposition on growth tendency of rapid contraction during cooling, huge tension by pulling out the silicon substrate, the GaN material to drop to the room temperature process usually occurs cracks, micro cracks and other defects seriously affect the material quality and device performance.
With the rapid development of semiconductor technology, science and technology workers found that based on the traditional technical route for data communication between the chip and the system is more and more difficult to meet the faster communication speed and higher system complexity requirements. Has realized the wide application of the third generation semiconductor devices in the field of light emitting diode LED and 10000mw laser light, made a great contribution to energy efficient lighting of mankind.
The third generation semiconductor material deposition of high quality GaN grown directly on silicon substrate, not only can make use of large size and low cost silicon wafer and process automation line greatly reduce manufacturing cost of GaN based devices, will also provide a new technical route for the laser system and silicon based optoelectronic devices such as integrated electronic devices. The researchers not only reduce between GaN and silicon thermal expansion coefficient mismatch often caused by cracking, but also greatly reduces the density of defects in Gan materials.
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